BAS40WS 查看數據表（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd
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BAS40WS Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
BAS40WS
SCHOTTKY DIODE
Features
· Low Turn-on Voltage
· Fast Switching
· PN Junction Guard Ring for Transient and
ESD Protection
Marking:
BAS40WS:43
SOD-323
Unit:mm
1.70
2.65
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Power Dissipation (Note 1)
Forward Surge Current (Note 1)
@ t < 1.0s
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
IFM
Pd
IFSM
RqJA
Tj
TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol Min Typ
V(BR)R
40
—
VF
—
—
IR
—
20
Cj
—
4.0
trr
—
—
Notes: 1. Valid Provided that terminals are kept at ambient temperature.
BAS40
40
200
350
600
357
-55 to +125
-65 to +150
Unit
V
mA
mW
mA
°C/W
°C
°C
Max
—
380
1000
200
5.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
IR= 10mA
tp < 300ms, IF = 1.0mA
tp < 300ms, IF = 40mA
tp < 300ms, VR = 30V
VR = 0V, f =1.0MHz
IF = IR = 10mA to IR = 1.0mA,
RL = 100W
1 /1
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