1PS76SB70 查看數據表（PDF） - NXP Semiconductors.
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1PS76SB70 Datasheet PDF : 20 Pages
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NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
4. Marking
Table 5. Marking codes
Type number
Marking code[1]
1PS76SB70
S2
1PS79SB70
G
BAS70
73*
BAS70H
AH
BAS70L
S8
BAS70W
73*
BAS70-04
74*
BAS70-04W
74*
BAS70-05
75*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Type number
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07S
BAS70-07V
BAS70VV
BAS70XY
-
Marking code[1]
75*
76*
76*
77*
77*
77
N1
70*
-
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR
reverse voltage
-
IF
forward current
-
IFRM
repetitive peak forward
tp ≤ 1 s; δ ≤ 0.5
-
current
IFSM
non-repetitive peak forward tp ≤ 10 ms
[1] -
current
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
[1] Tj = 25 °C prior to surge.
Max Unit
70
V
70
mA
70
mA
100
mA
150
°C
+150 °C
+150 °C
BAS70_1PS7XSB70_SER_9
Product data sheet
Rev. 09 — 13 January 2010
© NXP B.V. 2010. All rights reserved.
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