BAT140C(2003) 查看數據表（PDF） - Philips Electronics
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BAT140C Datasheet PDF : 7 Pages
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Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
VR
IF
IF(AV)
IFSM
continuous reverse voltage
continuous forward current
average forward current
non-repetitive peak forward current
Tamb = 65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
t = 8.3 µs half sinewave;
JEDEC method
IRSM
Tstg
Tj
non-repetitive peak reverse current
storage temperature
junction temperature
tp = 100 µs
−
40
V
−
1
A
−
1
A
−
10
A
−
0.5
A
−65
+150 °C
−
125
°C
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 ms; d = 0.02.
CONDITIONS
see Fig.3
IF = 100 mA; note 1
IF = 1 A; note 1
VR = 10 V; note 1; see Fig.4
VR = 40 V; note 1; see Fig.4
VR = 4 V; f = 1 MHz; see Fig.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
TYP. MAX. UNIT
280
330
mV
460
500
mV
15
40
µA
60
300
µA
65
80
pF
VALUE
100
UNIT
K/W
2003 Aug 04
3
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