BAT54CV 查看數據表（PDF） - NXP Semiconductors.

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BAT54CV

Two Schottky barrier double diodes

NXP Semiconductors. 

NXP Semiconductors

BAT54CV

Two Schottky barrier double diodes

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per device, one diode loaded

Ptot

total power dissipation Tamb ≤ 25 °C

[2]

[3] -

[4] -

Tj

junction temperature

-

Tamb

ambient temperature

−65

Tstg

storage temperature

−65

Max Unit

350

mW

420

mW

125

°C

+125 °C

+150 °C

[1] Tj = 25 °C prior to surge.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter

Conditions

Per device, one diode loaded

Rth(j-a)

thermal resistance from in free air

junction to ambient

Rth(j-sp)

thermal resistance from

junction to solder point

Min Typ Max Unit

[1][2]

[3] -

-

360 K/W

[4] -

-

300 K/W

[5] -

-

175 K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[5] Soldering point of cathode tab.

BAT54CV

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 15 November 2010

© NXP B.V. 2010. All rights reserved.

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