BAT54CV 查看數據表（PDF） - NXP Semiconductors.
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BAT54CV Datasheet PDF : 11 Pages
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NXP Semiconductors
BAT54CV
Two Schottky barrier double diodes
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
reverse current
VR = 25 V
Cd
diode capacitance VR = 1 V; f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
[1]
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
μA
-
-
10
pF
103
IF
(mA)
102
(1) (2) (3)
msa892
10
(1) (2) (3)
1
10−1
0
0.4
0.8
1.2
VF (V)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
103
IR
(μA)
102
10
msa893
(1)
(2)
1
(3)
10−1
0
10
20 VR (V) 30
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values
BAT54CV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 November 2010
© NXP B.V. 2010. All rights reserved.
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