BAT54SWT1 查看數據表（PDF） - ON Semiconductor
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BAT54SWT1 Datasheet PDF : 4 Pages
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BAT54SWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
V(BR)R
30
CT
−
Reverse Leakage
(VR = 25 V)
Forward Voltage
(IF = 0.1 mAdc)
Forward Voltage
(IF = 30 mAdc)
IR
−
VF
−
VF
−
Forward Voltage
(IF = 100 mAdc)
VF
−
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
Forward Voltage
(IF = 1.0 mAdc)
Forward Voltage
(IF = 10 mAdc)
trr
−
VF
−
VF
−
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
(t < 1.0 s)
IF
−
IFRM
−
IFSM
−
Typ
−
7.6
0.5
0.22
0.41
0.52
−
0.29
0.35
−
−
−
Max
Unit
−
V
10
pF
2.0
mAdc
0.24
Vdc
0.5
Vdc
0.8
Vdc
5.0
ns
0.32
Vdc
0.40
Vdc
200
mAdc
300
mAdc
600
mAdc
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
T
IF
10%
trr
T
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
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