BAV19WS-V 查看數據表（PDF） - Vishay Semiconductors
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BAV19WS-V Datasheet PDF : 6 Pages
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BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
Continuous reverse voltage
BAV19WS-V
VR
100
V
BAV20WS-V
VR
150
V
BAV21WS-V
VR
200
V
Repetitive peak reverse voltage
BAV19WS-V
VRRM
120
V
BAV20WS-V
VRRM
200
V
BAV21WS-V
VRRM
250
V
Forward continuous current
Tamb = 25 °C
IF
2501)
mA
Rectified current (average) half Tamb = 25 °C
wave rectification with resist.
load
IF(AV)
2001)
mA
Repetitive peak forward current f ≥ 50 Hz, θ = 180 °,
Tamb = 25 °C
IFRM
6251)
mA
Surge forward current
t < 1 s, Tj = 25 °C
IFSM
1
A
Power dissipation
Tamb = 25 °C
Ptot
2001)
mW
1) Valid provided that leads are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Test condition
Junction temperature
Storage temperature range
1) Valid provided that leads are kept at ambient temperature
Symbol
RthJA
Tj
Tstg
Value
6501)
1501)
- 65 to + 1501)
Unit
K/W
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 100 mA
IF = 200 mA
Leakage current
VR = 100 V
VR = 100 V, Tj = 100 °C
VR = 150 V
VR = 150 V, Tj = 100 °C
VR = 200 V
VR = 200 V, Tj = 100 °C
Dynamic forward resistance
IF = 10 mA
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 30 mA, IR = 30 mA,
Irr = 3 mA, RL = 100 Ω
Part
Symbol Min
Typ.
Max
Unit
VF
1.00
V
VF
1.25
V
BAV19WS-V
IR
100
nA
BAV19WS-V
IR
15
µA
BAV20WS-V
IR
100
nA
BAV20WS-V
IR
15
µA
BAV21WS-V
IR
100
nA
BAV21WS-V
IR
15
µA
rf
5
Ω
CD
1.5
pF
trr
50
ns
www.vishay.com
2
Document Number 85726
Rev. 1.4, 31-Jul-06
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