BAV19WS-V 查看數據表（PDF） - Vishay Semiconductors
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BAV19WS-V Datasheet PDF : 6 Pages
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Typical Characteristics
Tamb = 25 °C, unless otherwise specified
BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
1000
100
Tj = 100 ° C
10
25 ° C
1
0.1
0.01
0
0.2 0.4
0.6
0.8
1
18858
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
100
10
1
1
18861
10
100
IF - Forward Current (mA)
Figure 4. Dynamic Forward Resistance vs. Forward Current
0.3
0.2
DC current IF
Current (rectif.) IO
0.1
0
0
18859
30
60 90
120 150
Tamb - Ambient Temperature (°C)
Figure 2. Admissible Forward Current vs. Ambient Temperature
1000
100
10
Reverse Voltage
BAV19WS-V VR = 100 V
1
BAV20WS-V VR = 150 V
BAV21WS-V VR = 200 V
0.1
0 20 40 60 80 100 120 140 160 180 200
18862
Tj - Junction Temperature (°C)
Figure 5. Leakage Current vs. Junction Temperature
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
2.0
1.8
Tj = 25 ° C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
18863
VR - Reverse Voltage (V)
Figure 6. Capacitance vs. Reverse Voltage
Document Number 85726
Rev. 1.4, 31-Jul-06
www.vishay.com
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