BAV756 查看數據表（PDF） - Philips Electronics

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BAV756

High-speed switching diode array

Philips Electronics 

Philips Semiconductors

High-speed switching diode array

Product specification

BAV756S

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 450 mA.

PINNING

PIN

1

2

3

4

5

6

anode (a1)

cathode (k1)

common anode

cathode (k2)

anode (a2)

common cathode

DESCRIPTION

APPLICATIONS

• General purpose switching in e.g.

surface mounted circuits.

6 54

handbook, halfpage

654

DESCRIPTION

The BAV756S consists of four

high-speed switching diodes

fabricated in planar technology, and

encapsulated in the small SMD

SOT363 plastic package. One pair of

diodes has a common cathode; the

other pair has a common anode.

12

Top view

3

MSA370

1

2

3 MGL158

Marking code: A7t.

Fig.1 Simplified outline (SOT363) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

Per diode

VRRM

VR

IF

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

IFRM

repetitive peak forward current

IFSM

non-repetitive peak forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

single diode loaded; see Fig.2

all diodes loaded; see Fig.2

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Ts = 60 °C; note 1

Note

1. One or more diodes loaded.

MIN. MAX. UNIT

−

85

V

−

75

V

−

250

mA

−

100

mA

−

450

mA

−

4

A

−

1

A

−

0.5

A

−

350

mW

−65

+150 °C

−65

+150 °C

1997 Oct 21

2

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