BC369 查看數據表（PDF） - Philips Electronics
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BC369 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistor
Product specification
BC369
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
fT
hh----FF---EE---12-
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BC369-16
IE = 0; VCB = −25 V
−
IE = 0; VCB = −25 V; Tj = 150 °C
−
IC = 0; VEB = −5 V
−
IC = −5 mA; VCE = −10 V
50
IC = −500 mA; VCE = −1 V; see Fig.2 85
IC = −1 A; VCE = −1 V; see Fig.2
60
IC = −500 mA; VCE = −1 V; see Fig.2
100
BC369-25
160
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
IC = −1 A; IB = −100 mA
−
IC = −5 mA; VCE = −10 V
−
IC = −1 A; VCE = −1 V
−
IC = −10 mA; VCE = −5 V; f = 100 MHz 40
IC = 500 mA; VCE = 1 V
−
MAX.
−100
−10
−100
−
375
−
UNIT
nA
µA
nA
250
375
−0.5 V
−0.7 V
−1
V
−
MHz
1.6
1999 Apr 26
3
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