BC817U(2001) 查看數據表（PDF） - Infineon Technologies
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BC817U Datasheet PDF : 4 Pages
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BC817U
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 3 BC 817/818
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00223
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 3 BC 817/818
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00222
10 1
10 1
5
5
10 0
10 0
5
5
10 -1
0
0.2
0.4
0.6 V 0.8
VCEsat
DC current gain hFE = f (IC)
VCE = 1V
10 -1
0
1.0
2.0
3.0 V 4.0
V BEsat
Transition frequency fT = f (IC)
VCE = 5V
10 3 BC 817/818
h FE 5 100 ˚C
25 ˚C
-50 ˚C
10 2
5
10 1
5
EHP00224
10 3 BC 817/818
MHz
fT 5
10 2
5
EHP00218
10 0
10 -1
10 0
10 1
10 2 mA 10 3
10 1
10 0
10 1
10 2 mA 10 3
ΙC
ΙC
4
Nov-29-2001
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