BC817U 查看數據表（PDF） - Infineon Technologies
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BC817U Datasheet PDF : 7 Pages
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NPN Silicon AF Transistor Array
• For AF stages and driver applications
• High current gain
• Low collector-saturation voltage
• Two (galvanic) internal isolated transistors
with good matching in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC817U
4
5
3
6
2
1
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BC817U
Marking
Pin Configuration
Package
6Bs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation-
TS ≤ 115 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
Unit
45
V
50
5
500
mA
1000
100
200
330
mW
150
°C
-65 ... 150
1
2011-09-20
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