BC817U 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
BC817U Datasheet PDF : 7 Pages
| |||
BC817U
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
≤ 105
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain2)
IC = 100 mA, VCE = 1 V
IC = 300 mA, VCE = 1 V
Collector-emitter saturation voltage2)
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage2)
IC = 500 mA, IB = 50 mA
V(BR)CEO 45
-
-V
V(BR)CBO 50
-
-
V(BR)EBO 5
-
-
ICBO
IEBO
µA
-
-
0.1
-
-
50
-
- 100 nA
hFE
VCEsat
-
160 250 400
100 -
-
-
-
0.7 V
VBEsat
-
-
1.2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
- 170
Collector-base capacitance
f = 1 MHz, VBE = 10 V
Ccb
-
6
Emitter-base capacitance
Ceb
-
60
VEB = 0.5 V, f = 1 MHz
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
- MHz
- pF
-
2
2011-09-20
Share Link: 