BC818 查看數據表（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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生产厂家

BC818

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

BC8 1

TRANSISTOR (NPN)

BC818-16

BC818-25

BC818-40

FEATURES

z For general AF applications

z High collector current

z High current gain

z Low collector-emitter saturation voltage

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.5

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Collecter capactiance

Transition frequency

Symbol

Test conditions

MIN

VCBO

IC= 10μA, IE=0

30

VCEO

IC= 10mA, IB=0

25

VEBO

IE= 10μA, IC=0

5

ICBO

VCB= 25 V , IE=0

IEBO

VEB= 4V, IC=0

hFE(1)

VCE= 1V, IC= 100mA

100

hFE(2)

VCE= 1V, IC= 300mA

60

VCE(sat) IC= 500mA, IB= 50mA

VBE(sat) IC= 500mA, IB= 50mA

VBE

VCE=1V, IC= 500mA

Cob

VCB=10V ,f=1MHz

6

fT

VCE= 5 V, IC= 50mA

f=100MHz

170

MAX

0.1

0.1

630

UNIT

V

V

V

μA

μA

0.7

V

1.2

V

1.2

V

pF

MHz

CLASSIFICATION OF hFE (1)

Rank

Range

Marking

BC818-16

100-250

6E

BC818-25

160-400

6F

BC818-40

250-630

6G

１　

JinYu

semiconductor

www.htsemi.com

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