BC846BDW1T1G 查看數據表（PDF） - ON Semiconductor
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BC846BDW1T1G Datasheet PDF : 10 Pages
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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC847BDW1T1G
600
500
150°C
VCE = 5 V
400
25°C
300
200
−55°C
100
0
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain at VCE = 5 V
600
500
150°C
VCE = 10 V
400
25°C
300
200
−55°C
100
0
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. DC Current Gain at VCE = 10 V
0.25
IC/IB = 10
0.20
0.15
0.10
0.05
0.00
0.0001
25°C
150°C
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 14. VCE at IC/IB = 10
0.30
0.25
IC/IB = 20
0.20
0.15
25°C
150°C
0.10
0.05
−55°C
0.00
0.1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 15. VCE at IC/IB = 20
1.20
1.00
IC/IB = 10
0.80
0.60
0.40
−55°C
25°C
150°C
0.20
0.00
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 16. VBE(sat) at IC/IB = 10
1.20
1.00
IC/IB = 20
0.80
−55°C
25°C
0.60
0.40
150°C
0.20
0.00
0.1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 17. VBE(sat) at IC/IB = 20
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