BC847M 查看數據表（PDF） - Philips Electronics
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BC847M Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN general purpose transistors
GRAPHICAL INFORMATION BC847BM
600
handbook, halfpage
hFE
MHC642
(1)
400
(2)
200
(3)
010−1
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.6 DC current gain; typical values.
Product specification
BC847M series
1200
handbook, halfpage
VBE
(mV)
1000
(1)
800
(2)
600
(3)
400
MHC643
20010−2
10−1
1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
104
handbook, halfpage
VCEsat
(mV)
103
MHC644
102
(1)
(2)
(3)
1100−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBEsat
(mV)
1000
800
600
MHC645
(1)
(2)
(3)
400
20010−1
1
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102 IC (mA) 103
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
6
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