BC847S(2004) 查看數據表（PDF） - Diotec Semiconductor Germany

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BC847S
(Rev.:2004)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

BC846S ... BC848S

Characteristics (Tj = 25/C)

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

Min.

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

VCEsat

–

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

VBEsat

–

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBEon

VBEon

Collector-Base cutoff current – Kollektorreststrom

580 mV

–

IE = 0, VCB = 30 V

IE = 0, VCB = 30 V, Tj = 150/C

ICB0

–

ICB0

–

Emitter-Base cutoff current – Emitterreststrom

IC = 0, VEB = 5 V

IEB0

–

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacit. – Kollektor-Basis-Kapazität

100 MHz

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Noise figure – Rauschzahl

CEB0

–

VCE = 5 V, IC = 200 :A

RG = 2 kS, f = 1 kHz, )f = 200 Hz

F

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Pinning – Anschlußbelegung

654

Kennwerte (Tj = 25/C)

Typ.

Max.

90 mV

200 mV

250 mV

600 mV

700 mV

–

900 mV

–

660 mV

–

700 mV

770 mV

–

15 nA

–

5 :A

–

100 nA

–

3.5 pF

6 pF

9 pF

–

2 dB

10 dB

420 K/W 2)

BC856S ... BC858S

T1

T2

1

2

3

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

13

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