BC858BDW 查看數據表（PDF） - Weitron Technology

零件编号

产品描述 (功能)

生产厂家

BC858BDW

PNP Dual General Purpose Transistors

Weitron Technology 

PNP Dual General Purpose Transistors

P b Lead(Pb)-Free

3

2

1

4

5

6

PNP+PNP

BC856BDW Series

6 54

1

23

SOT-363(SC-88)

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

BC856 BC857 BC858

Unit

65

45

30

V

80

50

30

V

5.0

5.0

5.0

V

100

100

100

mA

Thermal Characteristics

Characteristics

Total Device Dissipation Per Device

FR-5 Board(1)TA = 25°C

Derate Above 25°C

Thermal Resistance, Junction to Ambient

Junction Temperature Range

Storage Temperature Range

Note : FR-5=1.0 x 0.75 x 0.062 inch

Symbol

PD

RθJA

Tj

Tstg

Max

380

250

3.0

328

+150

-55 to +150

Device Marking

BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L

Unit

mW

mW/ °C

°C/W

°C

°C

WEITRON

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http://www.weitron.com.tw

14-Nov-07

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