BCM847DS 查看數據表（PDF） - NXP Semiconductors.

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BCM847DS

NPN/NPN matched double transistors

NXP Semiconductors. 

NXP Semiconductors

BCM847BV/BS/DS

NPN/NPN matched double transistors

Table 8. Characteristics …continued

Tamb = 25 °C unless otherwise specified

Symbol Parameter

Conditions

fT

transition frequency VCE = 5 V;

IC = 10 mA;

f = 100 MHz

NF

noise figure

VCE = 5 V;

IC = 0.2 mA;

RS = 2 kΩ;

f = 10 Hz to

15.7 kHz

VCE = 5 V;

IC = 0.2 mA;

RS = 2 kΩ;

f = 1 kHz;

B = 200 Hz

Per device

hFE1/hFE2 hFE matching

VBE1−VBE2 VBE matching

VCE = 5 V;

IC = 2 mA

VCE = 5 V;

IC = 2 mA

Min Typ Max Unit

100 250 -

MHz

-

2.8 -

dB

-

3.3 -

dB

[3] 0.9

1

-

[4] -

-

2

mV

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

[3] The smaller of the two values is taken as the numerator.

[4] The smaller of the two values is subtracted from the larger value.

BCM847BV_BS_DS_6

Product data sheet

Rev. 06 — 28 August 2009

© NXP B.V. 2009. All rights reserved.

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