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BCR08AM-12 查看數據表(PDF) - Renesas Electronics

零件编号
产品描述 (功能)
生产厂家
BCR08AM-12
Renesas
Renesas Electronics Renesas
BCR08AM-12 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BCR08AM-12A
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Commutation Characteristics
101
7
5
Typical Example
Tj = 125°C
IT = 1A
3
τ = 500µs
2
VD = 200V
100
7
III Quadrant
5
Minimum
3 Characteristics
Value
2
I Quadrant
10–1
10–1 2 3 5 7 100 2 3 5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6
6
6V
A
V
330
Test Procedure II
6V
A
V
330
Test Procedure III
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
I Quadrant
100
80
60
40
III Quadrant
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
5
3
IRGT I
2
IRGT III
102
7
5
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0343-0200 Rev.2.00 Nov 30, 2007
Page 5 of 6

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