BCR08AS 查看數據表（PDF） - Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
BCR08AS Datasheet PDF : 6 Pages
| |||
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
DISTRIBUTION
3
T2+, G–
2
TYPICAL EXAMPLE
101
7
5
3
2
100
7
5
3
2
10–1
T2+,
T2– ,
T2– ,
G+
G–
G+
TYPICAL
EXAMPLE
–40 0
40 80
120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
100
80
60
III QUADRANT
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
101
7
5
TYPICAL
EXAMPLE
Tj = 125°C
3
IT = 1A
τ = 500µs
2
VD = 200V
f = 3Hz
100
7
III QUADRANT
5
3 MINIMUM
2
CHARAC-
TERISTICS
I QUADRANT
VALUE
10–1
10–1 2 3
5 7 100
23
5 7 101
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Mar. 2002
Share Link: 