BCP5616 查看數據表（PDF） - STMicroelectronics

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BCP5616

Low power NPN Transistor

STMicroelectronics 

BCP56-16

1

Electrical ratings

Table 1.

Symbol

Absolute maximum rating

Parameter

VCBO

VCEO

VEBO

IC

ICM

IB

IBM

Ptot

Tstg

TJ

Collector-base voltage (IE = 0)

Collector-emitter voltage (IB = 0)

Emitter-base voltage (IC = 0)

Collector current

Collector peak current (tP < 5ms)

Base current

Base peak current (tP < 5ms)

Total dissipation at Tamb = 25°C

Storage temperature

Max. operating junction temperature

Table 2. Thermal data

Symbol

Parameter

Rthj-amb Thermal resistance junction-ambient (1)__max

1. Device mounted on PCB area of 1 cm2.

Electrical ratings

Value

Unit

100

V

80

V

5

V

1

A

1.5

A

0.1

A

0.2

A

1.6

W

-65 to 150

°C

150

°C

Value

78

Unit

°C/W

3/9

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