BCR2PM-14LE 查看數據表（PDF） - Renesas Electronics
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BCR2PM-14LE Datasheet PDF : 7 Pages
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BCR2PM-14LE
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Ratings
2
10
0.41
1
0.1
6
1
– 40 to +150
– 40 to +150
2.0
Preliminary
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
W
W
V
A
C
C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
1.0
mA Tj = 150C, VDRM applied
On-state voltage
VTM
—
—
2.1
V Tj = 25C, ITM = 3 A,
Instantaneous measurement
Gate trigger voltage Note2
VFGT
—
—
2.0
V Tj = 25C, VD = 6 V, RL = 6 ,
VRGT
—
—
2.0
V
RG = 330
VRGT
—
Gate trigger current Note2
IFGT
—
IRGT
—
—
2.0
V
—
10
mA Tj = 25C, VD = 6 V, RL = 6 ,
—
10
mA RG = 330
IRGT
—
—
10
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.1
—
—
V Tj = 150C, VD = 1/2 VDRM
Rth (j-a)
—
—
45 C/W Junction to ambient,
Natural convection
Critical-rate of rise of off-state
commutation voltage Note3
(dv/dt)c 0.5
—
—
V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 2 of 6
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