BCR2PM-14LE 查看數據表（PDF） - Renesas Electronics
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BCR2PM-14LE Datasheet PDF : 7 Pages
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BCR2PM-14LE
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 125°C)
160
Typical Example
140
Tj = 125°C
120
100
80
I Quadrant
60
III Quadrant
40
20
0
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics
101
7 Typical Example
5
3
2
Conditions
VD = 200 V
IT = 1 A
τ = 500 μs
Tj = 125°C
100
III Quadrant
7
5
3
Minimum
Characteristics
I Quadrant
2
Value
10–1
10–1 2 3 5 7 100 2 3 5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
Test Procedure I
6Ω
Test Procedure II
6V
A
V
RG
Test Procedure III
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 150°C)
160
Typical Example
140
Tj = 150°C
120
100
80
60
40
20
0
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
IRGT III
3
2
Typical Example
102
7
5 IFGT I
3
IRGT I
2
101
100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (μs)
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 5 of 6
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