BCX19LT1G(2009) 查看數據表（PDF） - ON Semiconductor
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BCX19LT1G Datasheet PDF : 4 Pages
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BCX18LT1G, PNP
BCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
BCX19LT1
BCX18LT1
VCEO
Vdc
45
25
Collector − Base Voltage
BCX19LT1
BCX18LT1
VCBO
Vdc
50
30
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
5.0
Vdc
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1), TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
http://onsemi.com
PNP
COLLECTOR
3
NPN
COLLECTOR
3
1
BASE
1
BASE
2
EMITTER
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx
= T2 or U1
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 0
Publication Order Number:
BCX18LT1/D
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