BD3DD13003-B1 查看數據表（PDF） - Secos Corporation.
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BD3DD13003-B1 Datasheet PDF : 2 Pages
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Elektronische Bauelemente
BD13003B
1.5A , 700V
NPN Plastic Encapsulated Transistor
FEATURES
Power Switching Applications
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-126
CLASSIFICATION OF ts
Product-Rank BD3DD13003-A1
Range
2-2.5 (μs)
Product-Rank BD3DD13003-B1
Range
3-3.5 (μs)
BD3DD13003-A2
2.5-3 (μs)
BD3DD13003-B2
3.5-4 (μs)
Collector
Base
Emitter
A
E
F
B
C
L
N
H
M
K
D
J
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
1.5
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
tf
Min.
700
400
9
-
-
-
20
5
-
-
5
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
0.5
Max.
-
-
-
1
0.5
1
30
-
0.6
1.2
-
-
Unit
Test Conditions
V
V
V
mA
mA
mA
V
V
MHz
IC=5mA, IE=0
IC=10mA, IB=0
IE=2mA, IC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
IC=1A, IB=250mA
IC=1A, IB=250mA
VCE=10V, IC=100mA, f =1MHz
μs IC=1A,IB1= -IB2=0.2A,VCC=100V
Storage time
tS
2
-
4
μs IC=250mA (UI9600)
http://www.SeCoSGmbH.com/
14-Mar-2014 Rev. B
Any changes of specification will not be informed individually.
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