BD243C 查看數據表（PDF） - ON Semiconductor
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BD243C Datasheet PDF : 6 Pages
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BD243B, BD243C (NPN), BD244B, BD244C (PNP)
103
VCE = 30 V
102
TJ = 150°C
101
100°C
100
25°C
10-1 IC = ICES
10- 2 REVERSE
FORWARD
10- 3
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
10M
VCE = 30 V
1.0M
IC = 10 x ICES
100k
IC = 2 x ICES
10k
IC ≈ ICES
1.0k
0.1k
20
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40
60
80 100
120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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