BD303 查看數據表（PDF） - Inchange Semiconductor
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BD303 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD303
DESCRIPTION
·DC Current Gain -
: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Complement to Type BD304
APPLICATIONS
·Designed for audio output stages up to 25W, vertical
deflection circuits in color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
55
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.3 ℃/W
isc Website：www.iscsemi.cn
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