BD303 查看數據表（PDF） - Inchange Semiconductor

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BD303

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD303

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.3A

ICEO

Collector Cutoff Current

VCE= 30V; IB=B 0

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0; TC= 150℃

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 2A; VCE= 2V

fT

Current-Gain—Bandwidth Product

IC= 0.3A; VCE= 3V

60

V

1.0

V

1.5

V

1.0

mA

1.0

mA

5.0

mA

30

3

MHz

isc Website：www.iscsemi.cn

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