BD683 查看數據表（PDF） - Comset Semiconductors
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BD683 Datasheet PDF : 3 Pages
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NPN BD683 – BD683A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector cut-off current
IE=0, VCB= 120 V
IE=0, VCB= 120V, Tj= 150°C
-
-
-
-
0,2
2
mA
ICEO
Collector cut-off current
IB=0,VCE= 1/2VCEOMAX
-
- 0,5 mA
IEBO
Emitter cut-offcurrent
IC=0, VEB=5 V
-
-
5 mA
VCE(SAT)
Collector-Emitter saturation IC=1.5 A, IB=30 mA BD683
Voltage (*)
IC=2 A, IB=40 mA BD683A
-
-
-
-
2,5
2,8
V
hFE
DC Current Gain (*)
VCE=3 V, IC=1.5 A
VCE=3 V, IC=2 A
BD683
BD683A
750
-
-
-
VBE
Base-Emitter Voltage (*)
VCE=3 V, IC=1.5 A
VCE=3 V, IC=2 A
BD683
BD683A
-
- 2,5 V
hfe
Small signal current gain VCE=3 V, IC=1.5 A, f= 1 MHz
10
-
-
-
fhfe
Ut-off frequency
VCE=3 V, IC=1.5 A
- 60 - kHz
VF
Diode forward voltage
IF=1,5 A
- 1,5 -
V
I(SB)
Second-breakdown
collector current
VCE=50 V, tP= 20ms, non rep.
without heatsink
0,8
-
-
A
ton
Turn-on time
toff
Turn-off time
Icon= 1.5A, -Ibon= Iboff= 6mA
VCC=30V
-
-
0,8
4,5
2
8
µs
(*) Measured under pulse conditions :tP <300µs, δ <2%.
23/10/2012
COMSET SEMICONDUCTORS
2|3
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