BD7628FVM 查看數據表（PDF） - ROHM Semiconductor

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BD7628FVM

Silicon Monolithic Integrated Circuit

ROHM Semiconductor 

3/4

○Electrical characteristics（Unless otherwise specified, Ta= 25℃, VCC=5.0V, VEE=-5.0V）

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Circuit current

ICC

-

16.7 23.0 mA No Signal

Input bias current

IIB

-

-

6

uA Vin=0.0V

Maximum output voltage

VOM

5.0

5.7

-

Vpp DC Voltage

Voltage gain

GV

5.6

5.9

6.2

dB Vin=1.0Vpp, f=1MHz

Frequency characteristics

GF

-2.0 -0.1 1.0

dB Vin=1.0Vpp, f=1MHz/10MHz

Cross talk

CT

-

-63 -50 dB Vin=1.0Vpp, f=4.43MHz

○Test Circuit Diagrams

OUTA

1

V

75Ω

2kΩ

-INA

75Ω

2

2kΩ

+INA

A

3

VEE

50Ω

4

VEE=5V

10μF 0.1μF

VCC

8

OUTB

7

-INB

6

+INB

5

VCC=5V

A

0.1μF

10μF

The test circuit for B channel is equal to that for A channel.

REV. A

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