BD807 查看數據表（PDF） - Inchange Semiconductor
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BD807 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD807
DESCRIPTION
·DC Current Gain -
: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·Complement to Type BD808
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IBB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
90
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc Website：www.iscsemi.cn
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