BD901 查看數據表（PDF） - SavantIC Semiconductor
零件编号
产品描述 (功能)
生产厂家
BD901 Datasheet PDF : 3 Pages
| |||
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD895/897/899/901
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD895
V(BR)CEO
Collector-emitter
breakdown voltage
BD897
BD899
IC=100mA, IB=0
BD901
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VEC
ton
toff
Collector-emitter saturation voltage IC=3A ,IB=12mA
Base-emitter on voltage
BD895
Collector cut-off current
BD897
BD899
BD901
BD895
IC=3A ; VCE=3V
VCB=45V, IE=0
TC=100
VCB=60V, IE=0
TC=100
VCB=80V, IE=0
TC=100
VCB=100V, IE=0
TC=100
VCE=30V, IB=0
Collector cut-off current
BD897
BD899
VCE=30V, IB=0
VCE=40V, IB=0
BD901 VCE=50V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=3A ; VCE=3V
Diode forward voltage
IE=8A
Turn-on time
Turn-off time
IC=3A ; IB1=-IB2=12mA
VBE=-3.5V;RL=10B;tp=20µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN TYP. MAX UNIT
45
60
V
80
100
2.5
V
2.5
V
0.2
2.0
0.2
2.0
mA
0.2
2.0
0.2
2.0
0.5
mA
2
mA
750
3.5
V
1
µs
5
µs
MAX
1.79
UNIT
/W
2
Share Link: 