BDT61C 查看數據表（PDF） - Inchange Semiconductor
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BDT61C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistors
BDT61/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 750(Min)@ IC= 1.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A;
100V(Min)- BDT61B; 120V(Min)- BDT61C
·Complement to Type BDT60/A/B/C
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT61
60
VCBO
Collector-Base
Voltage
BDT61A
80
V
BDT61B
100
BDT61C
120
BDT61
60
VCEO
Collector-Emitter
Voltage
BDT61A
80
V
BDT61B
100
BDT61C
120
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IBB
Base Current
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
0.1
A
2
W
50
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2.5
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
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