BF1005SW 查看數據表（PDF） - Infineon Technologies

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BF1005SW

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

Thermal Resistance

Parameter

Channel - soldering point1)

BF1005S, BF1005SR

BF1005SW

Symbol

Rthchs

BF1005S...

Value

Unit

K/W

≤ 370

≤ 280

Electrical Characteristics

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 650 µA, VG1S = 0 , VG2S = 0

Gate1-source breakdown voltage

+IG1S = 10 mA, VG2S = 0 , VDS = 0

Gate2 source breakdown voltage

±IG2S = 10 mA, VG1S = 0 , VDS = 0

Gate1-source leakage current

VG1S = 6 V, VG2S = 0

Gate 2 source leakage current

±VG2S = 8 V, VG1S = 0 , VDS = 0

Drain current

VDS = 5 V, VG1S = 0 , VG2S = 4 V

Operating current (selfbiased)

VDS = 5 V, VG2S = 4 V

Gate2-source pinch-off voltage

VDS = 5 V, ID = 100 µA

V(BR)DS

12

-

-V

+V(BR)G1SS 8

-

12

±V(BR)G2SS 8

-

13

+IG1SS

- 100 - µA

±IG2SS

-

-

50 nA

IDSS

-

- 800 µA

IDSO

8

13 16 mA

VG2S(p)

-

1

-V

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

Feb-18-2004

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