BF1009S(1999) 查看數據表（PDF） - Infineon Technologies
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BF1009S Datasheet PDF : 4 Pages
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BF 1009S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 300 µA, VG1S = 0 V, VG2S = 0 V
Gate 1 - source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
Gate 2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
V(BR)DS
16
-
-V
+V(BR)G1SS 8
-
12
±V(BR)G2SS 10
-
16
Gate 1 source current
VG1S = 6 V, VG2S = 0 V
+IG1SS
-
-
60 µA
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V
Gate 2-source pinch-off voltage
VDS = 9 V, ID = 100 µA
±IG2SS
IDSS
IDSO
VG2S(p)
-
-
50 nA
-
-
500 µA
10
14
19 mA
-
0.9
-V
AC characteristics
Forward transconductance (self biased)
VDS = 9 V, VG2S = 6 V
Gate 1-input capacitance (self biased)
VDS = 9 V, VG2S = 6 V, f = 1 MHz
Output capacitance (self biased)
VDS = 9 V, VG2S = 6 V, f = 1 MHz
Power gain (self biased)
VDS = 9 V, VG2S = 6 V, f = 800 MHz
Noise figure (self biased)
VDS = 9 V, VG2S = 6 V, f = 800 MHz
Gain control range (self biased)
VDS = 9 V, VG2S = 6 ... 0V, f = 800 MHz
gfs
Cg1ss
Cdss
Gps
F800
Gps
26 30
- mS
-
2.1 2.7 pF
-
0.9
-
18 22
- dB
-
1.4
-
40 50
-
2
May-05-1999
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