BF1205C 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BF1205C Datasheet PDF : 22 Pages
| |||
Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BF1205C
-
plastic surface mounted package; 6 leads
Version
SOT363
4. Marking
Table 4: Marking
Type number
BF1205C
[1] * = p or -: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Marking code [1]
M6*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOS-FET
VDS
drain-source voltage
ID
drain current (DC)
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Ts ≤ 107 °C
-
-
-
-
[1] -
−65
-
[1] Ts is the temperature at the soldering point of the source lead.
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
6. Thermal characteristics
Table 6:
Symbol
Rth(j-s)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
Unit
240
K/W
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3 of 22
Share Link: 