BF1205C 查看數據表（PDF） - Philips Electronics
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BF1205C Datasheet PDF : 22 Pages
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Philips Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
Table 8: Dynamic characteristics for amplifier a [1] …continued
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Conditions
Xmod
cross-modulation
input level for k = 1%; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
Min
[2]
90
-
-
100
Typ Max
--
90 -
99 -
105 -
Unit
dBµV
dBµV
dBµV
dBµV
[1] For the MOS-FET not in use: VG1-S(b) = 0 V; VDS(b) = 0 V.
[2] Measured in Figure 33 test circuit.
8.1.1 Graphs for amplifier a
30
ID
(mA)
20
001aaa554
(1)
(2)
(3)
(4)
(5)
10
(6)
(7)
0
0
0.4
0.8
1.2
1.6
2
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(a) = 5 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
Fig 4. Transfer characteristics; typical values.
32
ID
(mA)
24
16
8
001aaa555
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
0
0
2
4
6
VDS (V)
(1) VG1-S(a) = 1.8 V.
(2) VG1-S(a) = 1.7 V.
(3) VG1-S(a) = 1.6 V.
(4) VG1-S(a) = 1.5 V.
(5) VG1-S(a) = 1.4 V.
(6) VG1-S(a) = 1.3 V.
(7) VG1-S(a) = 1.2 V.
(8) VG1-S(a) = 1.1 V.
(9) VG1-S(a) = 1 V.
VG2-S = 4 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
Fig 5. Output characteristics; typical values.
9397 750 13005
Product data sheet
Rev. 01 — 18 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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