BF1208D 查看數據表（PDF） - Philips Electronics
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BF1208D Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
10
bos, gos
(mS)
1
10−1
001aag360
bos
gos
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA
Fig 16. Amplifier A: output admittance as a function of frequency; typical values
8.1.2 Scattering parameters for amplifier A
Table 9. Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
40
0.992
−3.037 3.21
177.04 0.00763 87.34 0.992
−1.139
100 0.99152 −7.62 3.13270 172.06 0.00182 85.21 0.99168 −2.93
200 0.98685 −15.12 3.11006 164.12 0.00350 78.32 0.99047 −5.83
300 0.97979 −22.49 3.06743 156.24 0.00511 73.45 0.98876 −8.72
400 0.97176 −29.74 3.01634 148.56 0.00664 69.12 0.98662 −11.57
500 0.96209 −36.76 2.95125 141.00 0.00805 64.73 0.98424 −14.39
600 0.95108 −43.63 2.87828 133.56 0.00931 60.38 0.98168 −17.21
700 0.93915 −50.35 2.79946 126.28 0.01042 56.16 0.97884 −19.97
800 0.92742 −56.82 2.71508 119.20 0.01141 52.16 0.97630 −22.68
900 0.91573 −62.95 2.62937 112.29 0.01224 48.31 0.97350 −25.42
1000 0.90429 −68.83 2.54239 105.56 0.01297 44.63 0.97115 −28.14
8.1.3 Noise data for amplifier A
Table 10. Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
(ratio)
(deg)
rn (ratio)
400
0.9
0.77
22.7
0.65
800
1.1
0.73
45.75
0.62
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
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