BF1208D 查看數據表（PDF） - Philips Electronics

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BF1208D

Dual N-channel dual gate MOSFET

Philips Electronics 

NXP Semiconductors

BF1208D

Dual N-channel dual gate MOSFET

3. Ordering information

Table 3. Ordering information

Type number Package

Name Description

BF1208D

-

plastic surface-mounted package; 6 leads

4. Marking

Table 4. Marking codes

Type number

BF1208D

Marking code

4A

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per MOSFET

VDS

drain-source voltage

ID

drain current

IG1

gate1 current

IG2

gate2 current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

DC

DC

Tsp ≤ 109 °C

-

-

-

-

[1] -

−65

-

[1] Tsp is the temperature at the soldering point of the source lead.

Max

6

30

±10

±10

180

+150

150

Version

SOT666

Unit

V

mA

mA

mA

mW

°C

°C

BF1208D_1

Product data sheet

250

Ptot

(mW)

200

150

100

50

0

0

50

100

Fig 1. Power derating curve

Rev. 01 — 16 May 2007

001aac193

150

200

Tsp (˚C)

© NXP B.V. 2007. All rights reserved.

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