BF1210 查看數據表（PDF） - Philips Electronics
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BF1210 Datasheet PDF : 21 Pages
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
4. Marking
Table 4. Marking
Type number
BF1210
Marking
*AB
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
VDS
drain-source voltage
ID
drain current
IG1
gate1 current
IG2
gate2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
DC
Tsp ≤ 107 °C
-
-
-
-
[1] -
−65
-
[1] Tsp is the temperature at the soldering point of the source lead.
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
250
Ptot
(mW)
200
150
100
50
0
0
50
Fig 1. Power derating curve
001aac193
100
150
200
Tsp (˚C)
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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