BF1210 查看數據表（PDF） - Philips Electronics
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BF1210 Datasheet PDF : 21 Pages
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
0
gain
reduction
(dB)
10
20
001aaf484
110
Vunw
(dBµV)
100
001aaf485
30
90
40
50
0
1
2
3
4
VAGC (V)
80
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = 5 V; VGG = 5 V; ID(nom)(A) = 19 mA;
RG1(A) = 59 kΩ; f = 50 MHz; Tamb = 25 °C;
see Figure 32.
Fig 10. Amplifier A: typical gain reduction as a function
of the AGC voltage; typical values
VDS(A) = 5 V; VGG = 5 V; VG2-S(nom) = 4 V;
RG1(A) = 59 kΩ; fw = 50 MHz; funw = 60 MHz;
ID(nom)(A) = 19 mA; Tamb = 25 °C; see Figure 32.
Fig 11. Amplifier A: unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
30
ID
(mA)
20
001aaf486
10
0
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = 5 V; VGG = 5 V; VG2-S(nom) = 4 V; RG1(A) = 59 kΩ; f = 50 MHz; ID(nom)(A) = 19 mA; Tamb = 25 °C; see Figure 32.
Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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