BF1211 查看數據表（PDF） - NXP Semiconductors.
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BF1211 Datasheet PDF : 16 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 C
25
30
40
input capacitance at gate 1 f = 1 MHz
2.1 2.6
input capacitance at gate 2 f = 1 MHz
1.1
output capacitance
f = 1 MHz
0.9
reverse transfer capacitance f = 1 MHz
15
30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS (opt)
3.5
0.9 1.6
power gain
f = 800 MHz; YS = YS (opt)
f = 200 MHz; GS = 2 mS; BS = BS (opt);
GL = 0.5 mS; BL = BL (opt)
f = 400 MHz; GS = 2 mS; BS = BS (opt);
GL = 1 mS; BL = BL (opt)
f = 800 MHz; GS = 3.3 mS; BS = BS (opt);
GL = 1 mS; BL = BL (opt)
1.3 2
34
29
24
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90
at 10 dB AGC
92
at 40 dB AGC
100 105
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
Note
1. Measured in test circuit Fig.21.
2003 Dec 16
5
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