BF1212 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

BF1212

N-channel dual-gate MOS-FETs

NXP Semiconductors. 

NXP Semiconductors

N-channel dual-gate MOS-FETs

Product specification

BF1212; BF1212R; BF1212WR

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling.

ORDERING INFORMATION

TYPE NUMBER

BF1212

BF1212R

BF1212WR

NAME







PACKAGE

DESCRIPTION

plastic surface mounted package; 4 leads

plastic surface mounted package; reverse pinning; 4 leads

plastic surface mounted package; reverse pinning; 4 leads

VERSION

SOT143B

SOT143R

SOT343R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VDS

drain-source voltage

ID

drain current (DC)

IG1

gate 1 current

IG2

gate 2 current

Ptot

total power dissipation

BF1212; BF1212R

BF1212WR

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

Ts  116 C; note 1

Ts  122 C; note 1

Note

1. Ts is the temperature of the soldering point of the source lead.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to soldering point

BF1212; BF1212R

BF1212WR

MIN.









MAX.

6

30

10

10

UNIT

V

mA

mA

mA



180

mW



180

mW

65

+150

C



150

C

VALUE

185

155

UNIT

K/W

K/W

2003 Nov 14

3

Share Link: