BF1215 查看數據表（PDF） - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
40
ID
(mA)
30
20
10
001aal557
102
gis, bis
(mS)
10
1
10−1
001aal558
bis
gis
0
0
10
20
30
40
50
gain reduction (dB)
10−2
10
102
103
f (MHz)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
Tj = 25 °C; see Figure 32.
Fig 11. Amplifier A drain current as a function of gain
reduction; typical values
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA; Tj = 25 °C.
Fig 12. Amplifier A input admittance as a function of
frequency; typical values
102
|yfs|
(mS)
001aal559 −102
|yfs|
ϕfs
(deg)
103
|yrs|
(mS)
102
001aal560 −103
ϕrs
(deg)
ϕrs
−102
10
−10
|yrs|
ϕfs
10
−10
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA; Tj = 25 °C.
Fig 13. Amplifier A forward transfer admittance and
phase as a function of frequency;
typical values
1
−1
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA; Tj = 25 °C.
Fig 14. Amplifier A reverse transfer admittance and
phase as a function of frequency;
typical values
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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