BF547 查看數據表（PDF） - Philips Electronics
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BF547 Datasheet PDF : 11 Pages
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Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BF547
handbook1, .h6alfpage
Cre
(pF)
0.8
MBB474
0
0.1
1
10 VCB (V) 100
IE = ie = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage
handbook1, .h4alfpage
fT
(GHz)
1.0
MBB399
0.6
0.2
10−1
1
10
102
IC (mA)
VCE = 10 V; f = 500 MHz.
Fig.5 Transition frequency as a function of
collector current.
handbook,4h0alfpage
GUM
(dB)
30
MBB407
20
10
0
0
10
20
30
IC (mA)
VCE = 10 V; f = 100 MHz.
Fig.6 Maximum unilateral power gain as a
function of collector current.
September 1995
handboGokU,5Mh0alfpage
(dB)
40
30
20
10
0
−10
10
102
MBB408
103 f (MHz) 104
VCE = 10 V; IC = 15 mA.
Fig.7 Maximum unilateral power gain as a
function of frequency.
4
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