BF547W 查看數據表（PDF） - Philips Electronics
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BF547W Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BF547W
FEATURES
• Stable oscillator operation
• High current gain
• Good thermal stability.
DESCRIPTION
Silicon NPN transistor in a plastic
handbook, 2 columns
3
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
APPLICATIONS
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
2
Top view
MBC870
Marking code: E2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
GUM
maximum unilateral power gain
CONDITIONS
open emitter
open base
up to Ts = 63 °C; note 1
IC = 2 mA; VCE = 10 V
IC = 0; VCB = 10 V; f = 1 MHz
IC = 15 mA; VCE = 10 V;
f = 500 MHz
IC = 1 mA; VCE = 10 V;
f = 100 MHz; Tamb = 25 °C
MIN.
−
−
−
−
40
−
0.8
TYP.
−
−
−
−
95
1
1.2
MAX.
30
20
50
300
250
−
1.6
UNIT
V
V
mA
mW
pF
GHz
−
20
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 63 °C; note 1
Note to the “Quick reference data” and “Limiting values”
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
30
20
3
50
300
+150
+150
UNIT
V
V
V
mA
mW
°C
°C
June 1994
2
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