BF547W 查看數據表（PDF） - Philips Electronics

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BF547W

NPN 1 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 1 GHz wideband transistor

Product specification

BF547W

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point up to Ts = 63 °C; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

VALUE UNIT

290

K/W

CHARACTERISTICS

Tj = 25 °C (unless otherwise specified).

SYMBOL

PARAMETER

V(BR)CBO collector-base breakdown

voltage

V(BR)CEO collector-emitter breakdown

voltage

V(BR)EBO

ICBO

hFE

Cre

fT

emitter-base breakdown voltage

collector cut-off current

DC current gain

feedback capacitance

transition frequency

GUM

maximum unilateral power gain;

note 1

CONDITIONS

IC = 0.01 mA; IE = 0

IC = 10 mA; IB = 0

IE = 0.01 mA; IC = 0

IE = 0; VCB = 10 V

IC = 2 mA; VCE = 10 V

IC = 0; VCB = 10 V; f = 1 MHz

IC = 15 mA; VCE = 10 V;

f = 500 MHz

IC = 1 mA; VCE = 10 V;

f = 100 MHz; Tamb = 25 °C;

MIN.

−

−

−

−

40

−

0.8

−

TYP.

−

−

−

−

95

1

1.2

20

MAX.

30

20

3

100

250

−

1.6

−

UNIT

V

V

V

nA

pF

GHz

dB

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero.GUM

=

10

log --(--1-----–------s---1---1----2s---)-2--1-(---1-2----–------s---2--2-----2---)-

dB.

June 1994

3

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