BF995 查看數據表（PDF） - Vishay Semiconductors
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BF995 Datasheet PDF : 8 Pages
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BF995
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
96 12159
Tamb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
22
20 VDS = 15 V
18 f = 1 MHz
VG2S = 5 V
16
14
12
10
8
4V
6
0V
4
3V
2
2V
1V
0
- 2 - 1.5 - 1 - 0.5 0 0.5 1 1.5 2 2.5 3 3.5
96 12162
VG1S - Gate 1 Source Voltage (V)
Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage
22
20
VG1S = 0.6 V
18
16
0.4 V
14
0.2 V
12
10
0
8
- 0.2 V
6
- 0.4 V
4
- 0.6 V
2
- 0.8 V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
96 12160
VDS – Drain Source Voltage (V)
Figure 2. Drain Current vs. Drain Source Voltage
4.0
3.5
3.0
VDS = 15 V
VG2S = 4 V
2.5
f = 1 MHz
2.0
1.5
1.0
0.5
0.0
- 2.0 - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
96 12163
VG1S – Gate 1 Source Voltage (V)
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
24
22 VDS = 15 V
20 IDS = 10 mA
18
VG1S = 0.5 V
16
0V
14
12
10
8
6
- 0.5 V
4
2
0
-2 -1 0 1 2 3 4 5 6
96 12161
VG2S – Gate 2 Source Voltage (V)
Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage
4.0
3.6
VDS = 15 V
3.2
VG1S = 0
f = 1 MHz
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-2 -1 0 1 2 3 4 5 6 7
96 12164
VG2S – Gate 2 Source Voltage (V)
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Document Number 85009
Rev. 1.6, 02-Feb-06
www.vishay.com
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