BF998(1999) 查看數據表（PDF） - Vishay Semiconductors

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BF998
(Rev.:1999)

N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Vishay Semiconductors 

BF998/BF998R/BF998RW

Vishay Telefunken

Electrical AC Characteristics

VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified

Parameter

Forward transadmittance

Gate 1 input capacitance

Gate 2 input capacitance

Feedback capacitance

Output capacitance

Power gain

AGC range

Noise figure

Test Conditions

VG1S = 0, VG2S = 4 V

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

GS = 3,3 mS, GL = 1 mS, f = 800 MHz

VG2S = 4 to –2 V, f = 800 MHz

GS = 2 mS, GL = 0.5 mS, f = 200 MHz

GS = 3,3 mS, GL = 1 mS, f = 800 MHz

Symbol

y21s

Cissg1

Cissg2

Crss

Coss

Gps

Gps

DGps

F

F

Min Typ Max Unit

21 24

mS

2.1 2.5 pF

1.1

pF

25

fF

1.05

pF

28

dB

16.5 20

dB

40

dB

1.0

dB

1.5

dB

Document Number 85011

Rev. 4, 23-Jun-99

www.vishay.de • FaxBack +1-408-970-5600

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